Electronics

The course aims to provide basic knowledge and skills related to the use of semiconductor devices in CMOS and Bipolar technology in analog and digital circuits and the related analysis and design methodologies.

Knowledge and understanding. The student will deepen the role of electronics in modern applications and in anticipation of future ones. He will know the main circuit configurations that use diodes and transistors used in analog and digital electronics. He/she will know the analysis techniques and the first elements of design. He/she will know the main circuit performance parameters and a simulation and experimental characterization environment.

Applied knowledge and understanding. The student will be able to understand and analyze the performance of the main circuit configurations of analog and digital electronics. He will also be able to choose the most appropriate device and circuit configuration for solving elementary design problems. Finally, thanks to the laboratory activities, the student will improve his or her ability to work in groups and problem-solving.

Making judgments. Theoretical training is accompanied by examples, applications, exercises, both practical and theoretical, which accustom the student to make decisions and to be able to judge and predict the effect of his/her choices.

Communication skills. Upon completion of the course, the student is expected to acquire the ability to convey to his / her interlocutors, in a clear and complete way, the knowledge acquired

Learning skills. Upon completion of the course, the student is expected to be able to rework the knowledge to extend it to situations not explicitly dealt with, also being able to learn independently.

The course includes lectures, numerical exercises, the simulator (CAD), and experimental characterization experiences, aimed at putting into practice, developing and consolidating the theoretical contents, and the analysis and design techniques studied. Seminars will be organized by researchers and designers from companies operating in the microelectronics sector to provide an overview of the state of the art.

A Tutor will help during the lab activities.

The teacher is also available for reception meetings electronically, by appointment

Knowledge of elements of circuit theory (Ohm's law, Thevenin and Norton equivalent generators, Kirchhoff's laws, superposition principle, circuits in sinusoidal regime), of electromagnetism (electric charge, conducting and insulating materials, electromagnetic field), of theory of systems (transfer function in the Laplace variable, Bode diagrams, negative feedback), theory of signals (analog signals and digital signals) and electronic devices (semiconductor materials, diode, bipolar transistor and MOS). In any case, the main concepts of the topics mentioned will be summarized at the beginning of the course and where necessary.

1. Brief history of electronics. Classification of electronic signals. A/D and D/A conversion. Notation conventions. Dependent sources. Circuit theory review (Kirchhoff’s laws, voltage dividers, Thevenin and Norton equivalent circuits). Frequency spectrum of electronic signals. Amplifiers. 2L+2E
2. Operational amplifiers: Example of an analog electronic system. Amplification. Voltage, current, and power gains. Gain representation in decibels. The differential amplifier. Voltage transfer characteristic of the differential amplifier. Differential (voltage) gain. Signal amplification. Differential amplifier model. The ideal operational amplifier. Assumptions for the analysis of ideal operational amplifiers. Inverting amplifier. Transresistance amplifier.. Non-inverting amplifier. Unity-gain amplifier or voltage follower (Buffer). Summing amplifier. Subtractor amplifier. Active low-pass and high-pass filters. Miller integrator. Differentiator. Non-idealities. Common-mode gain. CMRR. Input and output resistances. Offset. Gain-bandwidth product. Slew rate. 4L+2E
3. Diode circuits: Junction diode. Review of diode I/V characteristics. Reverse, zero, and forward bias. Large-signal model. SPICE diode model. Switching times. Diode circuit analysis. Graphical analysis with load line. Analysis with the ideal diode mathematical model (small-signal resistance).Constant voltage drop model.Multi-diode circuits. Half-wave rectifier with R, C, and parallel RC load (capacitive filter). Full-wave and bridge rectifiers. Zener diode voltage regulator. Photodiodes, Schottky diodes, solar cells, and light-emitting diodes. 6L+6E
4. Review of field-effect transistors: NMOS and PMOS transistors, bipolar NPN and PNP transistors. Circuit symbols and operating equations in different regions. MOSFET biasing. Four-resistor bias network. Load-line analysis method. SPICE models. 6L+3E
5. Review of bipolar transistors (BJT): NPN and PNP BJTs. Circuit symbols and operating equations in different regions. Ebers-Moll model. BJT biasing. Four-resistor bias network. Load-line analysis method. SPICE models. 4L+2E
6. Small-signal models and single-stage amplifiers: The transistor as an amplifier. Coupling and bypass capacitors. Use of DC and AC equivalent circuits. Small-signal model of the diode. Small-signal model of the FET and BJT. Intrinsic voltage gain of MOSFET and BJT. Common-source (CS) and common-emitter (CE) amplifiers (mid-band voltage gain, input and output resistances). Power dissipation and signal swing. Common-drain/collector (CD/CC) and common-gate/base (CG/CB) configurations. CS/CE with degeneration resistor. Multistage AC-coupled amplifiers. 6L+6E
7. Current mirrors: DC analysis of MOS current mirror. Ratio modification in MOS and BJT mirrors. Cascode MOS current mirror. 3L+1E
8. Differential pair: Differential and common-mode signals. Large-signal analysis of BJT differential pair. Small-signal analysis of differential and common-mode gain and CMRR in BJT and MOS differential pairs. 5L+1E
9. Frequency response: Frequency response of amplifiers, mid-band gain, lower and upper cutoff frequencies. Estimation of lower cutoff frequency using short-circuit time constant method. Estimation of lower cutoff frequency for CS, CG, CD amplifier configurations. High-frequency model of the MOSFET. Transition frequency fT. High-frequency analysis of common-source amplifier. Miller effect. Estimation of upper cutoff frequency using open-circuit time constant method. Frequency response of CS, CD, and CG (CE, CC, CB) amplifiers, and CS/CE with degeneration. 6L+3E
10. Digital circuits: Ideal logic gates. Definition of logic levels and noise margins. Logic levels. Noise margins. Dynamic response of a logic gate. Rise and fall times. Propagation delay. Delay-power product. Boolean algebra review. CMOS logic circuits. Static characteristics of CMOS inverter. Transfer characteristic of CMOS inverter. CMOS NOR and NAND gates, complex CMOS logic gates. Bistable latch. SR flip-flop. JK flip-flop. T flip-flop. Flip-flop race condition. Transmission-gate D latch. Master-slave flip-flop. Edge-triggered flip-flop. Registers and counters. Random access memories (RAM). Six-transistor (6-T) memory cell. Dynamic memories (DRAM). One-transistor memory cell. Read-only memories (ROM). Non-volatile memories (EEPROM). Flash memories. 7L+2E
11. Electronic circuit simulation: LTSPICE. 6E
12. Specialized seminars: Lectures given by microelectronics industry experts.

 The topics covered in the course and the knowledge acquired are directly or indirectly functional to the development of sustainable technological solutions, as well as contributing to quality education, in line with Goals 3, 4, 5, 7, 9, 11, 12, and 13 of the 2030 Agenda for Sustainable Development.

1. Jaeger-Blalock, Microelectronics Ed. Mc-Graw-Hill, 2018.

2. Sedra - Smith, Microelectronic Circuits, Oxford University Press, 2021.

Learning is verified through the final exam. This consists of a written test, lasting 1.5 hours, and an oral interview.

The written test, whose evaluation is expressed in tenths, is preparatory to the oral exam and focuses on the following topics:

Analysis of an analog circuit in dc and in ac and which can include diodes and ideal operational amplifiers. Calculation of cutoff frequencies.

The evaluation of the test also takes into account the correctness and consistency of the procedure, the clarity of presentation, the correctness of the numerical calculations (if required) and how much the student has managed to complete. The result of the written test is published on the Studium platform (http://studium.unict.it). The minimum grade for admission to the oral exam is 4/10.

The oral interview is the final part of the exam and takes place with three questions focused on as many topics of the course (typically, two questions on analog circuits and one on digital circuits), on which the student must demonstrate adequate understanding, mastery of the topics discussed and clarity of presentation. The average duration of the oral interview is 30 minutes. The final grade will take into account the result of the written test and, with greater weight, the outcome of the oral interview.

To ensure equal opportunities and in compliance with current laws, interested students may request a personal interview in order to plan any compensatory and/or dispensatory measures based on educational objectives and specific needs. Students can also contact the CInAP (Centro per l’integrazione Attiva e Partecipata - Servizi per le Disabilità e/o i DSA) referring teacher within their department.

Single or double half-wave rectifier circuits

Series and parallel voltage regulator

Virtual short circuit

Applications of operational applicators

Transistor frequency of the MOS transistor

Current mirrors

Frequency response of a Common Source stage

Cascode amplifier

CMOS logic gates

BJT in saturation

NAND and NOR CMOS gates

Latch and fl ip- fl op

Registers