Electronics M - Z

Objectives

The course aims to provide basic knowledge on the modeling of electronic devices, on the operation of analog and digital circuits in CMOS technology and on the most common circuit configurations that make use of operational amplifiers. The course also provides knowledge on the use of CAD software (i.e., LTSPICE) for circuit simulation.

Knowledge and understanding

Based on the knowledge acquired during the course, the student will be able to understand the physics of electronic devices and the models used to describe their operation. They will gain knowledge of the functioning of analog and digital circuits implemented in CMOS technology, as well as some circuit configurations based on operational amplifiers. They will also become familiar with the basic numerical analyses typically employed in CAD software and will understand which analysis to use to perform a specific circuit simulation.

Applying knowledge and understanding

At the end of the course, student will have an overview of electronic devices and applications in which they are used. He will be able to analyze and design simple analog and digital circuits, also by CAD tools.

Making judgements

Students will be able to design simple analog and digital circuits by making proper and autonomous design choices. Proper numerical exercises and computer simulations will refine the making judgement skill.

Communication skills

Students will acquire the technical language of circuit electronics. They will also be able to communicate the proper design choices made to solve a circuit problem. Oral exam allows students to refine technical language and communication skills.

Learning skills

Students can expand their knowledge of electronics through the study of the recommended textbooks and through the ideas offered by the seminar activities organized within the course.

The course includes lectures and both numerical and simulation exercises (CAD). The latter are aimed at putting into practice and consolidating the theoretical contents as well as the analysis and the design techniques developed. Seminars will be organized by researchers and designers from companies operating in the microelectronics sector.

Should teaching be carried out in mixed mode or remotely, it may be necessary to introduce changes with respect to previous statements, in line with the programme planned and outlined in the syllabus.

Learning assesment may also be carried out on-line, should the conditions require it.

Essential Knowledge

1. Study of a mathematical function (Mathematical Analysis I)
2. Physical quantities related to electromagnetic phenomena (Physics II)
3. Fundamentals of circuit theory, including its main theorems (Electrical Engineering)

Important Knowledge

1. Tools of infinitesimal calculus (Mathematical Analysis I)
2. Analysis of linear time-invariant electrical circuits under steady-state, sinusoidal, and transient conditions (Electrical Engineering)
3. Laplace transform

Useful Knowledge

1. Basic theory of feedback systems
2. Transfer function
3. Bode plots

1. Course Introduction (1h)
[1h lecture - 0h exercise sessions]

• Course objectives
• Examination methods
• Teaching materials

2. Introduction to Electronics (5h)
[3h lecture - 2h exercise sessions]

• Brief history of electronics
• Classification of electronic signals. A/D and D/A conversion
• Notation conventions. Dependent sources. Review of circuit theory (Kirchhoff's Laws, voltage and current dividers, Thevenin and Norton equivalent circuits)
• Frequency spectrum of electronic signals
• Amplifiers. Example: FM receiver

3. Solid-State Electronics (4h)
[3h lecture - 1h exercise sessions]

• Solid-state electronic materials
• Covalent bond model
• Intrinsic carrier concentration
• Mass action law
• Drift currents and carrier mobility in semiconductors
• Drift velocity saturation
• Resistivity of intrinsic silicon
• Doped semiconductors
• Electron and hole concentrations in doped semiconductors
• Diffusion current
• Total current in a semiconductor
• Energy band model

4. Solid-State Diodes and Diode Circuits (14h)
[7h lecture - 7h exercise sessions]

• PN junction diode
• Diode I-V characteristic
• Diode Characteristics Under Reverse, Zero, and Forward Bias
• Diode temperature coefficient. 
• Reverse breakdown and Zener diode
• pn Junction Capacitance in Reverse Bias and Forward Bias
• Dynamic Switching Behavior of the Diode
• Large-signal model
• SPICE diode model
• Analysis of diode circuits
• Graphical analysis using the load line
• Analysis using the ideal diode mathematical model (small-signal resistance)
• Constant voltage-drop analysis
• Multiple-diode circuits
• Half-wave rectifier with R, C, and RC loads (capacitive filter)
• Full-wave and bridge rectifiers
• Zener diode voltage regulator
• Photodiodes, Schottky diodes, solar cells, and light-emitting diodes (LEDs)

5. MOS Transistors (9h)
[6h lecture - 3h exercise sessions]

• Characteristics of the MOS Capacitor. Accumulation
• Region. Depletion Region. Inversion Region
• The NMOS Transistor
• Qualitative I/V Behavior of the NMOS Transistor. Triode Region Characteristics of the NMOS Transistor
• On Resistance. Saturation of the I/V Characteristics
• Mathematical Model in the Saturation (Pinch-Off) Region Transconductance
• Channel-Length Modulation. Body Effect. PMOS Transistors
• MOSFET Circuit Symbols
• NMOS Transistor Capacitances in the Triode Region. Capacitances in the Saturation Region. Capacitances in Cutoff
• MOSFET biasing (4 resistors network) and analysis. Modeling in SPICE

6. Digital Circuits (10h)
[9h lecture - 1h exercise sessions]

• Ideal Logic Gates
• Logic Level Definitions and Noise Margins
• Logic Gate Design Goals
• Dynamic Response of Logic Gates
• Rise Time and Fall Time. Propagation Delay
• Power-Delay Product. Review of Boolean Algebra
• CMOS logic circuits. Static characteristics of the CMOS Inverter
• CMOS Voltage Transfer Characteristics
• CMOS NOR and NAND Gates
• Design of Complex Gates in CMOS
• Cascade Buffers and Delay Model
• Optimum Number of Stages. Bistable latch
• SR Flip-Flop. JK Flip flop
• Flip-Flop race condition
• The D-Latch Using Transmission Gates
• Master-Slave Flip-Flop
• Edge triggered Flip flop
• Counters and registers
• Random Access Memories (RAMs)
• 6-T cell. Dynamic RAMs. 1-T cell

7. Operational Amplifiers (9h)
[9h lecture - 0h exercise sessions]

• An Example of an Analog Electronic System
• Amplification
• Voltage Gain, Current Gain and Power Gain
• The Decibel Scale. The Differential Amplifier
• Differential Amplifier Voltage Transfer Characteristic
• Differential Voltage Gain
• Differential Amplifier Model
• Ideal Operational Amplifier. Assumptions for Ideal Operational Amplifier
• The Inverting Amplifier
• The Transresistance Amplifier
• The Noninverting Amplifier
• The Unity-Gain Buffer, or Voltage Follower
• The Summing Amplifier
• The Difference Amplifier
• The Integrator
• The Differentiator
• Nonidealities: Common mode gain. CMRR. I/O resistances
• Offset
• Slew rate

8. Small-Signal Models and Single-Stage Amplifiers (7h)
[4h lecture - 3h exercise sessions]

• The Transistor as an Amplifier
• Coupling and Bypass Capacitors
• Circuit Analysis Using dc and ac Equivalent Circuits
• Small-Signal Modeling of the Diode
• Small-Signal Models for Field-Effect Transistors
• Intrinsic Voltage Gain of the MOSFET
• The Common-Source Amplifier (Voltage Gain. I/O resistances)
• Power dissipation and signal swing
• Amplifiers classification. CS, CD, CG configurations
• CS with resistive degeneration. AC-coupled multi stage amplifiers

9. Current Mirrors (1h)
[1h lecture - 0h exercise sessions]

• DC analysis of the MOS current mirror
• Changing the MOS Mirror Ratio
• Cascode current mirror

10. Frequency Response (1h)
[1h lecture - 0h exercise sessions]

• Frequency response of Amplifiers
• Midband gain, Low and high cutoff frequencies (fL and fH) 
• Estimation of (fL through the short-circuit time constant method for CS, CG, CD amplifier
• High-frequency MOSFET model. Transition frequency,  fT
• Channel Length Dependence of fT.Analisi ad alta frequenza dell’amplificatore source comune. 
• L’effetto Miller. High-Frequency C-S Amplifier Analysis. 
• Common-Emitter and Common-Source Amplifier High-Frequency Response
• Estimation of  fH through the open-circuit time constant method for CS

11. Electronic Circuit Simulation: LTspice (12h)
[0h lecture - 12h exercise sessions]

• Diode circuits
• MOS transistors
• Operational amplifier circuits
• Single-transistor amplifiers
• Frequency response of a CS amplifier

12. Seminars by Electronics Companies in the Catania Area (5h)
[5h lecture - 0h exercise sessions]

Contribution of the course to the Goals of the 2030 Agenda for Sustainable Development

The topics covered in the course and the acquired knowledge are directly or indirectly aimed at thedevelopment of sustainable technological solutions, as well as contributing to a high quality education, inaccordance with Goals 3, 4, 7, 9, 11, 12, 13, 14 and 15 of the 2030 Agenda for Sustainable Development.

1. Jaeger-Blalock, Microelettronica Ed. Mc-Graw-Hill V Edizione.

2. Sedra-Smith, Circuiti per la Microelettronica, Edises.

Learning is verified through an oral interview. The oral interview generally takes place with three questions focused on as many topics of the course (typically, a question on electronic devices, one on analog circuits and one on digital circuits), on which the student must demonstrate adequate understanding, mastery of the topics discussed. and clarity of presentation. During the oral interview, students may be asked to set up a numerical exercise concerning the analysis or design of an electronic circuit. The average duration of the oral interview is 30 minutes. The final grade will take into account the student's participation in lessons (through the presence and assigned exercises) and, with greater weight, the outcome of the oral interview.

Verification of learning can also be carried out on-line, should the conditions require it.

To ensure equal opportunities and in compliance with current laws, interested students may request a personal interview in order to plan any compensatory and/or dispensatory measures based on educational objectives and specific needs. Students can also contact the CInAP (Centro per l’integrazione Attiva e Partecipata - Servizi per le Disabilità e/o i DSA) referring teacher within their department.

Below are listed, by way of example and in a non-exhaustive manner, some topics that are asked during the oral interview.

Device Physics

1. Carrier concentration
2. Mass action law
3. Drift current (mobility, electric field)
4. Silicon resistivity
5. Doped semiconductors
6. Energy band model
7. Diode current equation
8. MOS transistor small-signal model

Diodes

1. Potential barrier in the pn junction
2. Diode I-V characteristic
3. Breakdown region (Avalanche and Zener)
4. Capacitive effects (junction and diffusion capacitances)
5. Schottky diode
6. Diode small-signal model
7. Diode circuit analysis (load line, ideal diode model)
8. Half-wave rectifiers
9. Full-wave rectifier
10. Zener diode voltage regulator

MOS Transistors

1. Operating regions of the MOS capacitor
2. Current in the triode region
3. Current in the saturation region
4. Channel-length modulation
5. Capacitances in the triode region
6. Capacitances in the saturation region
7. Three-resistor bias network
8. Four-resistor bias network
9. MOS transistor small-signal model
10. MOS transistor transition frequency

Operational Amplifiers

1. Ideal operational amplifier
2. Virtual short circuit
3. Inverting operational amplifier configuration
4. Non-inverting operational amplifier configuration
5. Op-amp summing circuit
6. Op-amp subtractor circuit
7. DAC converter using a weighted summing amplifier
8. DAC converter using an R-2R ladder network
9. Miller integrator
10. Practical (lossy) integrator
11. Operational amplifier with finite gain
12. Bandwidth of an operational amplifier

Digital Electronics

1. Definition of logic levels and noise margins
2. Rise and fall times
3. Propagation delay
4. Power dissipation in CMOS digital circuits
5. CMOS inverter
6. CMOS NOR gates
7. CMOS NAND gate
8. Complex CMOS logic gates
9. Buffer circuits. Optimum number of stages
10. SR latch
11. SR flip-flop
12. JK flip-flop
13. T flip-flop
14. D flip-flop
15. Master-slave flip-flop
16. Edge-triggered flip-flop
17. Registers
18. Counters
19. Random Access Memories (RAM)
20. Six-transistor memory cell (6T)
21. Dynamic Random Access Memories (DRAM)
22. Single-transistor memory cell
23. Read-Only Memories (ROM)
24. Electrically Erasable Programmable Read-Only Memories (EEPROM)
25. Flash memories

Single-Stage Amplifiers

1. Common-Source amplifier
2. Common-Drain amplifier
3. Common-Gate amplifier
4. Open-circuit time-constant method
5. Short-circuit time-constant method